PDTC114YM315
NXP USA Inc.
Deutsch
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Kollektor-Emitter-Durchbruch (max) | 50 V |
VCE Sättigung (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Transistor-Typ | NPN - Pre-Biased |
Supplier Device-Gehäuse | DFN1006-3 |
Serie | Automotive, AEC-Q101 |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Widerstand - Basis (R1) | 10 kOhms |
Leistung - max | 250 mW |
Produkteigenschaften | Eigenschaften |
---|---|
Verpackung / Gehäuse | SC-101, SOT-883 |
Paket | Bulk |
Befestigungsart | Surface Mount |
Frequenz - Übergang | 230 MHz |
DC Stromgewinn (HFE) (Min) @ Ic, VCE | 100 @ 5mA, 5V |
Strom - Collector Cutoff (Max) | 1µA |
Strom - Kollektor (Ic) (max) | 100 mA |
Grundproduktnummer | PDTC114 |
TRANS PREBIAS NPN 3DFN
TRANS PREBIAS NPN 250MW 3DFN
NXP SOT883
PDTC114YQC/SOT8009/DFN1412D-3
NEXPERIA/ New
PDTC114YQB-Q/SOT8015/DFN1110D-
TRANS PREBIAS NPN 500MW TO92-3
PDTC114YQB/SOT8015/DFN1110D-3
TRANS PREBIAS NPN 250MW SMT3
TRANS PREBIAS NPN 250MW SC89
NOW NEXPERIA PDTC114YMB - SMALL
NXP SOT-523
PDTC114YQC-Q/SOT8009/DFN1412D-
NOW NEXPERIA PDTC114YQA SMALL SI
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() PDTC114YM315NXP USA Inc. |
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